MSMBJSAC7.0E3 Microchip MSMBJSAC7.0E3 TVS Diodes Unidirectional 12.6V 38A 7V

Microchip MSMBJSAC7.0E3 Trans Voltage Suppressor Diode, 500W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA

Microchip MSMBJSAC7.0E3 TVS Diodes Overview

Trans Voltage Suppressor Diode, 500W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA

Key Features of Microchip MSMBJSAC7.0E3 TVS Diodes

  • Peak Pulse Current: 38A
  • Clamping Voltage: 12.6V
  • Reverse Standoff Voltage: 7V
  • Polarity: Unidirectional

Microchip MSMBJSAC7.0E3 Specifications

General

Clamping Voltage12.6V
CompositionZener
DirectionUnidirectional
Element ConfigurationSingle
Leakage Current300µA
Max Operating Temperature150°C
Max Reverse Leakage Current300µA
Min Breakdown Voltage8.33V
Min Operating Temperature-65°C
MountSurface Mount
Number of Elements1
Number of Pins2
Number of Unidirectional Channels1
Peak Pulse Current38A
Peak Pulse Power500W
PolarityUnidirectional
Power Line ProtectionNo
Reverse Breakdown Voltage8.33V
Reverse Standoff Voltage7V
RoHSCompliant
Test Current1mA

Specification: Microchip MSMBJSAC7.0E3 TVS Diodes Unidirectional 12.6V 38A 7V

Brand

Microchip

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Microchip MSMBJSAC7.0E3 TVS Diodes Unidirectional 12.6V 38A 7V
Microchip MSMBJSAC7.0E3 TVS Diodes Unidirectional 12.6V 38A 7V
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