JANTXV2N3700UB Microchip JANTXV2N3700UB BJTs 500mV
Microchip JANTXV2N3700UB Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Microchip JANTXV2N3700UB BJTs Overview
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Key Features of Microchip JANTXV2N3700UB BJTs
- Optimized to collector Emitter Voltage (VCEO): 500mV, improving robustness in practical applications.
Microchip JANTXV2N3700UB BJTs Applications
Audio & Analog Amplification
- Often used in [RF] ÿ IF amplifier discrete transistor stage, where predictable behavior and reliability are important.
- Commonly applied in [Audio] ÿ Hi-Fi preamp differential pair input stage, supporting stable and efficient system performance.
- Commonly applied in [Factory Automation] ÿ Crane hoist drive | regen braking, dynamic braking, DC bus chopper | 1200V, 300ÿ1200A, module, supporting stable and efficient system performance.
- Commonly applied in [Medical] ÿ ECG preamp support bias transistor stage, supporting stable and efficient system performance.
- Well-suited for [RF] ÿ RF pre-emphasis/de-emphasis analog stages, helping designers meet typical integration requirements.
Microchip JANTXV2N3700UB Specifications
General
| Case/Package | SMD/SMT |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 500mV |
| Lead Free | Contains Lead |
| Lifecycle Status | Production |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 500mW |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Radiation Hardening | No |
| RoHS | Compliant |
| Schedule B | 8541210080 |
Specification: Microchip JANTXV2N3700UB BJTs 500mV
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