2N5153 Microchip 2N5153 BJTs 80V

Microchip 2N5153 Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-39 Bag

SKU: 2N5153 Category: Brand:

Microchip 2N5153 BJTs Overview

Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-39 Bag

Key Features of Microchip 2N5153 BJTs

  • Built to collector Emitter Voltage (VCEO): 80V, making integration easier across a wide range of systems.

Microchip 2N5153 BJTs Applications

Audio & Analog Amplification

  • Commonly applied in [RF] ÿ RF noise source transistor avalanche junction, supporting stable and efficient system performance.
  • Commonly applied in [RF] ÿ Clock distribution buffer transistor stage, supporting stable and efficient system performance.
  • Often used in [Medical] ÿ Pulse oximeter analog front-end discrete helper stages, where predictable behavior and reliability are important.
  • Well-suited for [Lighting] ÿ Decorative lighting flasher multivibrator, helping designers meet typical integration requirements.
  • Well-suited for [Control] ÿ Solenoid driver transistor stage, helping designers meet typical integration requirements.

Microchip 2N5153 Specifications

General

Case/PackageTO-39
Collector Base Voltage (VCBO)100V
Collector Emitter Voltage (VCEO)80V
Emitter Base Voltage (VEBO)5.5V
Lifecycle StatusProduction
Max Operating Temperature200°C
Min Operating Temperature-65°C
MountThrough Hole
Number of Elements1
Number of Pins3
PolarityPNP
Power Dissipation1W
RoHSNon-Compliant
Schedule B8541100080

Specification: Microchip 2N5153 BJTs 80V

Brand

Microchip Technology

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