2N5153 Microchip 2N5153 BJTs 80V
Microchip 2N5153 Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-39 Bag
Microchip 2N5153 BJTs Overview
Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-39 Bag
Key Features of Microchip 2N5153 BJTs
- Built to collector Emitter Voltage (VCEO): 80V, making integration easier across a wide range of systems.
Microchip 2N5153 BJTs Applications
Audio & Analog Amplification
- Commonly applied in [RF] ÿ RF noise source transistor avalanche junction, supporting stable and efficient system performance.
- Commonly applied in [RF] ÿ Clock distribution buffer transistor stage, supporting stable and efficient system performance.
- Often used in [Medical] ÿ Pulse oximeter analog front-end discrete helper stages, where predictable behavior and reliability are important.
- Well-suited for [Lighting] ÿ Decorative lighting flasher multivibrator, helping designers meet typical integration requirements.
- Well-suited for [Control] ÿ Solenoid driver transistor stage, helping designers meet typical integration requirements.
Microchip 2N5153 Specifications
General
| Case/Package | TO-39 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Voltage (VCEO) | 80V |
| Emitter Base Voltage (VEBO) | 5.5V |
| Lifecycle Status | Production |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS | Non-Compliant |
| Schedule B | 8541100080 |
Specification: Microchip 2N5153 BJTs 80V
|
User Reviews
Only logged in customers who have purchased this product may leave a review.


There are no reviews yet.