MOSFETs
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- 500mΩ RDS(ON) @ 2.5V – Superior efficiency in low-voltage systems
- SOT-523-3 Package – Fits high-density PCB designs
- 600mA Drain Current – Handles robust loads in portable electronics
- Ultra-low conduction loss: RDS(on) 5.9 mΩ typ., 7 mΩ max @ VGS = 10 V, ID = 82 A.
- High current & ruggedness: ID = 140 A (Tc = 25 °C), IDM = 550 A, repetitive avalanche allowed up to Tj(max).
- High-temperature operation: qualified for 175 °C junction temperature with low RθJC = 0.45 °C/W for efficient heat flow.
2N7002T from Onsemi delivers robust performance in compact form factor, combining industry-standard specifications with enhanced reliability. Designed for general-purpose switching applications, this MOSFET offers:
- AEC?Q101 qualified - Meets automotive-grade component reliability standards
- PPAP capable - Supports Production Part Approval Process documentation
- RoHS compliant construction - Eliminates hazardous substances (Pb, Hg, Cd, etc.)
- Halogen/BFR free - Environmentally friendly material composition