Discrete Semiconductors
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Nexperia BZX384-B3V3,115 Zener Diode Single 3.3V 2% 95Ohm 300mW Automotive 2-Pin SOD-323 T/R
Nexperia BZX84-C2V7,215 Diodes - Zener - Single Diode SOT-23 (TO-236AB) 250mW 2.7V Surface Mount
Nexperia BZX84-C7V5,215 Zener Diode, 7.5V V(Z), 5%, 0.25W, Silicon, Unidirectional, TO-236AB
- Fast Switching Speed
Features a 4 ns reverse recovery time, making it suitable for high-speed signal switching and pulse applications. - 100 V / 200 mA Performance
Offers 100 V repetitive reverse voltage and 200 mA average rectified forward current for reliable small-signal and general-purpose circuit use. - DO-35 Through-Hole Package
Comes in a DO-35 axial through-hole package, ideal for traditional PCB assembly, prototyping, and maintenance applications.
- General-purpose NPN transistor for switching and amplification
- 40 V collector-emitter voltage with 200 mA continuous collector current
- 300 MHz transition frequency in a compact through-hole TO-92-3 package
2N7002T from Onsemi delivers robust performance in compact form factor, combining industry-standard specifications with enhanced reliability. Designed for general-purpose switching applications, this MOSFET offers:
- AEC?Q101 qualified - Meets automotive-grade component reliability standards
- PPAP capable - Supports Production Part Approval Process documentation
- RoHS compliant construction - Eliminates hazardous substances (Pb, Hg, Cd, etc.)
- Halogen/BFR free - Environmentally friendly material composition
The BTA16-800BRG from STMicroelectronics is a highly reliable, rugged triac designed for demanding AC power switching applications. With 16A current handling, 800V blocking voltage, and optimized triggering performance, it is an exceptional choice for motor control, lighting control, and industrial power switching.
- High-Efficiency TrenchFET Structure
The SUM85N15-19-E3 employs Vishay’s advanced TrenchFET® technology, offering exceptionally low Rds(on) and optimized switching performance to reduce energy losses in demanding power systems. - Robust Automotive-Ready Design
With a 150 V breakdown voltage, 85 A current rating, and operation up to 175°C, this MOSFET is built to withstand the harsh conditions of automotive EPS, ABS, and DC/DC environments. - Thermally Optimized D2PAK-3 Package
The low thermal resistance D2PAK-3 package enhances heat dissipation, enabling a high power dissipation of 375 W and stable long-term performance even under heavy load.
- Ultra-Efficient: Just 720mV Vf @ 2A reduces thermal stress
- Automotive Tough: AEC-Q101 certified (-55°C to +175°C operation)
- Space-Smart: DO-219AB (2.9×1.9mm) fits high-density PCBs