Discrete Semiconductors

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  • 500mΩ RDS(ON) @ 2.5V – Superior efficiency in low-voltage systems
  • SOT-523-3 Package – Fits high-density PCB designs
  • 600mA Drain Current – Handles robust loads in portable electronics
 
  • Ultra-low conduction loss: RDS(on) 5.9 mΩ typ., 7 mΩ max @ VGS = 10 V, ID = 82 A.
  • High current & ruggedness: ID = 140 A (Tc = 25 °C), IDM = 550 A, repetitive avalanche allowed up to Tj(max).
  • High-temperature operation: qualified for 175 °C junction temperature with low RθJC = 0.45 °C/W for efficient heat flow.
 
2N7002T from Onsemi delivers robust performance in compact form factor, combining industry-standard specifications with enhanced reliability. Designed for general-purpose switching applications, this MOSFET offers:
  • AEC?Q101 qualified - Meets automotive-grade component reliability standards
  • PPAP capable - Supports Production Part Approval Process documentation
  • RoHS compliant construction - Eliminates hazardous substances (Pb, Hg, Cd, etc.)
  • Halogen/BFR free - Environmentally friendly material composition
The BTA16-800BRG from STMicroelectronics is a highly reliable, rugged triac designed for demanding AC power switching applications. With 16A current handling, 800V blocking voltage, and optimized triggering performance, it is an exceptional choice for motor control, lighting control, and industrial power switching.
  • Ultra-Efficient: Just 720mV Vf @ 2A reduces thermal stress
  • Automotive Tough: AEC-Q101 certified (-55°C to +175°C operation)
  • Space-Smart: DO-219AB (2.9×1.9mm) fits high-density PCBs
 

Discrete semiconductors are standalone electronic parts performing single functions, including diodes, transistors (BJT, FET, MOSFET), thyristors, and rectifiers. Unlike integrated circuits (ICs), they handle specific tasks like amplification, switching, or power control. Selection depends on voltage, speed, and thermal requirements for the application.

BJT vs. MOSFET for switching: Which should I choose?
For high-speed, power-efficient switching (e.g., PWM, digital circuits), MOSFETs excel due to voltage control and minimal gate current. BJTs, being current-controlled, suit analog amplification but have higher power loss in switching. Prioritize MOSFETs for fast, low-power switching and BJTs for linear control.

Key diode selection parameters?
Critical specs include:

  • Forward current (IF): Max continuous current.
  • Reverse voltage (VR): Peak blocking voltage.
  • Reverse recovery time (trr): Critical for high-speed switching (use Schottky diodes for <10ns).
    Also consider power dissipation and package type (e.g., through-hole vs. SMD).

Why is thermal management vital for discrete semiconductors?
Overheating reduces lifespan and reliability. Power devices (e.g., MOSFETs, rectifiers) require heatsinks, thermal pads, or PCB copper pours to dissipate heat. Always check junction temperature (Tj) limits and derate components in high-temperature environments.

Can I interface discrete semiconductors directly with microcontrollers?
Yes, but ensure compatibility:

  • BJT/MOSFET switching: Add base/gate resistors to limit current/voltage.
  • Logic levels: 5V/3.3V MCUs may need level shifters for high-voltage transistors.
  • Current drive: Verify MCU pins can supply enough current for the load.
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