IXTH8P50 Littelfuse IXTH8P50 MOSFETs 20V 500V 8A 1.2O 3.4nF

Littelfuse IXTH8P50 MOSFETs Overview

MOSFET – Single +FWD Discrete -8A -500V TO-247AD (

Key Features of Littelfuse IXTH8P50 MOSFETs

• Optimized to drain to Source Resistance: 1.2O, improving robustness in practical applications.
• Engineered to gate to Source Voltage (Vgs): 20V, supporting dependable performance in real-world designs.
• Built to continuous Drain Current (ID): 8A, making integration easier across a wide range of systems.
• Engineered to input Capacitance: 3.4nF, supporting dependable performance in real-world designs.
• Optimized to drain to Source Voltage (Vdss): 500V, improving robustness in practical applications.

Littelfuse IXTH8P50 MOSFETs Applications

DC-DC / Power Conversion

• Commonly applied in [Motor Drives] ÿ ABS/ESP solenoid drivers MOSFET stage, supporting stable and efficient system performance.
• Commonly applied in [Motor Drives] ÿ Coil gun / actuator research drivers (pulsed MOSFET), supporting stable and efficient system performance.
• Often used in [Motor Drives] ÿ Haptic actuator driver MOSFET stage, where predictable behavior and reliability are important.
• Often used in [Motor Drives] ÿ Automotive injector peak/hold MOSFET stage, where predictable behavior and reliability are important.
• Often used in [Industrial] ÿ Laser diode driver MOSFET stage, where predictable behavior and reliability are important.