IXTP2R4N120P Littelfuse IXTP2R4N120P MOSFETs 20V 1.2kV 2.4A 7.5O 1.207nF 150°C

Littelfuse IXTP2R4N120P MOSFETs Overview

Polar? Series – 100V – 1200V N-Channel Standard Power MOSFETs, TO-220, RoHS

Key Features of Littelfuse IXTP2R4N120P MOSFETs

• Optimized to max Junction Temperature (Tj): 150°C, improving robustness in practical applications.
• Engineered to continuous Drain Current (ID): 2.4A, supporting dependable performance in real-world designs.
• Built to drain to Source Voltage (Vdss): 1.2kV, making integration easier across a wide range of systems.
• Optimized to gate to Source Voltage (Vgs): 20V, improving robustness in practical applications.
• Optimized to drain to Source Resistance: 7.5O, improving robustness in practical applications.
• Designed to input Capacitance: 1.207nF, helping ensure consistent and reliable operation.

Littelfuse IXTP2R4N120P MOSFETs Applications

DC-DC / Power Conversion

• Well-suited for [Infrastructure] ÿ Solar streetlight battery switching MOSFET, helping designers meet typical integration requirements.
• Often used in [Power] ÿ Wireless charging transmitter inverter MOSFETs, where predictable behavior and reliability are important.
• Well-suited for [Motor Drives] ÿ Window lift motor driver MOSFET, helping designers meet typical integration requirements.
• Often used in [Motor Drives] ÿ RC boat ESC MOSFETs, where predictable behavior and reliability are important.
• Commonly applied in [Power] ÿ E-bike controller DC-DC converter MOSFETs, supporting stable and efficient system performance.