SUM85N15-19-E3 SUM85N15-19-E3 D2Pak-3 NPN N-Channel 150 V TrenchFET Power MOSFET

  • High-Efficiency TrenchFET Structure
    The SUM85N15-19-E3 employs Vishay’s advanced TrenchFET® technology, offering exceptionally low Rds(on) and optimized switching performance to reduce energy losses in demanding power systems.
  • Robust Automotive-Ready Design
    With a 150 V breakdown voltage, 85 A current rating, and operation up to 175°C, this MOSFET is built to withstand the harsh conditions of automotive EPS, ABS, and DC/DC environments.
  • Thermally Optimized D2PAK-3 Package
    The low thermal resistance D2PAK-3 package enhances heat dissipation, enabling a high power dissipation of 375 W and stable long-term performance even under heavy load.

SKU: SUM85N15-19-E3 Category: Brand:

High-Efficiency 85 A MOSFET in D2PAK-3 Package for Automotive and Power Conversion Applications

The SUM85N15-19-E3 is a high-performance N-channel 150 V (D-S) MOSFET from Vishay Semiconductors, engineered for demanding power-conversion, motor-drive, and automotive applications that require high efficiency, low conduction losses, and exceptional thermal handling. Built on Vishay’s advanced TrenchFET® silicon technology, this MOSFET delivers robust switching behavior, low Rds(on), and excellent avalanche ruggedness—attributes that make it a preferred choice for designers seeking reliability under harsh electrical and thermal conditions.

Housed in a compact yet thermally optimized D2PAK-3 (TO-263-3) surface-mount package, the SUM85N15-19-E3 provides very low thermal resistance and a maximum power dissipation rating of 375 W, allowing it to operate confidently even under elevated load conditions. Its 85 A continuous drain current capability, 150 V breakdown voltage, and 175°C maximum junction temperature rating make it suitable for high-current switching in industrial and automotive systems, including 42-V EPS, ABS units, DC/DC converters, and various motor-control architectures.

With a typical gate charge of just 76 nC, along with balanced turn-on and turn-off delay times, the device ensures efficient high-frequency switching and reduced losses across the system. It complies with Vishay’s strict quality controls, including 100% Rg testing, ensuring consistent performance and enhanced reliability during long-term operation.

Whether used as a primary-side switch in high-power SMPS designs or as a key component in battery-powered motor drives, the SUM85N15-19-E3 D2PAK-3 MOSFET represents an optimal combination of ruggedness, thermal performance, and electrical efficiency.

Features

  • TrenchFET® power MOSFET technology for reduced on-resistance and superior switching efficiency

  • High breakdown voltage of 150 V, suitable for demanding power systems

  • Low Rds(on) of 19 mΩ, minimizing conduction losses and improving overall efficiency

  • High continuous drain current capability: 85 A

  • Wide gate-source voltage range: –20 V to +20 V for robust gate drive compatibility

  • Junction temperature up to 175°C, enabling operation in harsh thermal environments

  • Low thermal resistance package (D2PAK-3 / TO-263-3) optimized for high-power dissipation

  • Fast switching speeds with 22 ns turn-on delay and 40 ns turn-off delay

  • 100% Rg tested to ensure predictable switching behavior

  • Automotive-grade reliability, ideal for EPS, ABS, and motor-drive systems

  • Available in Reel, Cut Tape, and MouseReel packaging options

Specifications

General Characteristics

  • Technology: Silicon TrenchFET

  • Transistor Polarity: N-Channel

  • Channel Mode: Enhancement

  • Configuration: Single channel

Electrical Parameters

  • Drain-Source Breakdown Voltage (Vds): 150 V

  • Continuous Drain Current (Id): 85 A

  • Drain-Source On-Resistance (Rds(on)): 19 mΩ

  • Gate-Source Voltage (Vgs): –20 V / +20 V

  • Gate-Source Threshold Voltage (Vgs(th)): 2 V

  • Gate Charge (Qg): 76 nC

  • Forward Transconductance (gfs): 25 S minimum

Switching Performance

  • Turn-On Delay Time: 22 ns

  • Rise Time: 170 ns

  • Turn-Off Delay Time: 40 ns

  • Fall Time: 170 ns

Thermal & Power Ratings

  • Power Dissipation (Pd): 375 W

  • Operating Temperature Range: −55°C to +175°C

  • Package: D2PAK-3 / TO-263-3

  • Mounting Style: SMD/SMT

Branding & Series

  • Manufacturer: Vishay

  • Series: SUM

  • Tradename: TrenchFET

  • Product Category: MOSFETs

  • Subcategory: Transistors

Applications

The SUM85N15-19-E3 is designed for high-current, high-efficiency switching in automotive, industrial, and power-conversion systems. Its strong thermal endurance and rugged electrical performance make it ideally suited for:

  • Primary-side switches in high-performance SMPS and isolated converters

  • Automotive systems, including:

    • 42-V Electric Power Steering (EPS)

    • Anti-lock Braking Systems (ABS)

    • DC/DC converters for vehicular power distribution

  • Motor drives for industrial automation and battery-powered machinery

  • High-efficiency DC power stages including synchronous rectification

  • Electric tools and motor control units

  • Load switching and power distribution modules requiring high current and robust transient capability

 

Specification: SUM85N15-19-E3 D2Pak-3 NPN N-Channel 150 V TrenchFET Power MOSFET

Brand

Texas Instruments

User Reviews

0.0 out of 5
0
0
0
0
0
Write a review

There are no reviews yet.

Only logged in customers who have purchased this product may leave a review.

SUM85N15-19-E3 D2Pak-3 NPN N-Channel 150 V TrenchFET Power MOSFET
SUM85N15-19-E3 D2Pak-3 NPN N-Channel 150 V TrenchFET Power MOSFET
MOZ Electronics
Logo
Shopping cart